发明授权
- 专利标题： Semiconductor memory device having a sense amplifier circuit
- 专利标题（中）： 具有读出放大器电路的半导体存储器件
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申请号： US514350申请日： 1983-07-15
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公开(公告)号： US4613957A公开(公告)日： 1986-09-23
- 发明人: Hiroshi Iwahashi
- 申请人： Hiroshi Iwahashi
- 申请人地址： JPX Kawasaki
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX57/129809 19820726; JPX57/129813 19820726; JPX58/56076 19830331; JPX58/56077 19830331; JPX58/56096 19830331
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C7/06 ; G01R19/00 ; G11C7/02
摘要：
A semiconductor memory device has a memory circuit with a plurality of memory cells, a data transmission line for transmitting the data from the memory circuit, and a data detection circuit for detecting the memory data supplied through the data transmission line. The data detection circuit produces output data in accordance with the direction of change in logic level of the memory data supplied through the data transmission line.