发明授权
- 专利标题: Molten metal discharging device
- 专利标题(中): 熔融金属放电装置
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申请号: US581510申请日: 1984-02-17
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公开(公告)号: US4632283A公开(公告)日: 1986-12-30
- 发明人: Kazumi Arakawa , Masuo Sugie , Takashi Watanabe , Takumi Nishio , Toshio Kawamura , Tsutomu Nagahata , Takashi Matsushita
- 申请人: Kazumi Arakawa , Masuo Sugie , Takashi Watanabe , Takumi Nishio , Toshio Kawamura , Tsutomu Nagahata , Takashi Matsushita
- 申请人地址: JPX Tokyo JPX Osaka
- 专利权人: Toshiba Ceramics Co., Ltd.,Sumitomo Metal Industries, Ltd.
- 当前专利权人: Toshiba Ceramics Co., Ltd.,Sumitomo Metal Industries, Ltd.
- 当前专利权人地址: JPX Tokyo JPX Osaka
- 优先权: JPX58-206477 19831102; JPX58-206478 19831102; JPX58-206480 19831102
- 主分类号: B22D41/08
- IPC分类号: B22D41/08 ; B22D41/42
摘要:
A molten metal discharging device comprising:a stationary plate adapted to be mounted at a bottom portion of a container accomodating molten metal, the stationary plate having a molten metal passage bore for permitting the molten metal from the container to be discharged therethrough, anda slide plate slidable along a lower face of the stationary plate and adapted to open or close the passage bore by being slidably displaced relative to the stationary plate, in whicha circumferential wall of the passage bore in the stationary plate is made of dense refractory material and the circumferential wall made of the dense refractory material has a plurality of gas supply holes therein for permitting a gas to be supplied into the passage borehas less fear that the passage bore thereof may be blocked by the solidification of the molten metal and/or deposition of metal oxides and has an improved resistance against corrosion by the molten metal.
公开/授权文献
- US5075253A Method of coplanar integration of semiconductor IC devices 公开/授权日:1991-12-24
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