发明授权
- 专利标题： Coating of III-V and II-VI compound semiconductors
- 专利标题（中）： III-V和II-VI化合物半导体的涂层
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申请号： US658569申请日： 1984-10-09
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公开(公告)号： US4634474A公开(公告)日： 1987-01-06
- 发明人: Irfan Camlibel , Aland K. Chin , Shobha Singh , LeGrand G. Van Uitert , George J. Zydzik
- 申请人： Irfan Camlibel , Aland K. Chin , Shobha Singh , LeGrand G. Van Uitert , George J. Zydzik
- 申请人地址： NJ Murray Hill
- 专利权人： AT&T Bell Laboratories
- 当前专利权人： AT&T Bell Laboratories
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L21/22
- IPC分类号： H01L21/22 ; H01L21/314 ; H01L21/324 ; H01L21/471 ; H01L21/477 ; H01L23/28 ; H01L21/223 ; H01L21/383
摘要：
Proposed is a method of fabricating III-V and II-VI compound semiconductors and a resulting product where there is formed on the surface a coating which can function as a diffusion mask and/or a passivation layer. The coating is a silicon layer deposited by a method which does not damage the semiconductor surface.
公开/授权文献
- USD327161S Graphic pattern for the heel counter of a shoe 公开/授权日：1992-06-23
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