发明授权
- 专利标题: X-ray source and X-ray lithography method
- 专利标题(中): X射线源和X射线光刻法
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申请号: US699402申请日: 1985-02-07
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公开(公告)号: US4635282A公开(公告)日: 1987-01-06
- 发明人: Ikuo Okada , Yasunao Saitoh , Hideo Yoshihara , Satoshi Nakayama
- 申请人: Ikuo Okada , Yasunao Saitoh , Hideo Yoshihara , Satoshi Nakayama
- 申请人地址: JPX Tokyo
- 专利权人: Nippon Telegraph & Telephone Public Corp.
- 当前专利权人: Nippon Telegraph & Telephone Public Corp.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX59-24496 19840214
- 主分类号: H01J35/22
- IPC分类号: H01J35/22 ; G03F7/20 ; H01L21/027 ; H05G2/00 ; G21K5/00
摘要:
A gas injection type plasma X-ray source has a gas plenum for storing a discharging gas at a pressure in the range of 150 Torr and 1000 Torr, the stored gas being injected between a pair of electrodes through a gas valve. The electrodes are opposed to each other in a vacuum vessel, so that a gas jet for the production of a plasma is formed. A voltage is applied between the electrodes, so that a discharge plasma is produced between said electrodes. A linear plasma with a high temperature and a high density is produced by the pinch of the plasma due to its own magnetic field produced by the current flowing through the plasma, so that X-rays are emitted from the linear plasma. The X-ray source has a high conversion efficiency and a high discharge timing margin, and accordingly the stability and reproducibility of discharges are improved and the X-ray output is increased.
公开/授权文献
- US5853482A Method and apparatus for applying a coating solution 公开/授权日:1998-12-29
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