发明授权
- 专利标题： Method for forming deposited film
- 专利标题（中）： 沉积膜形成方法
-
申请号： US783490申请日： 1985-10-03
-
公开(公告)号： US4645684A公开(公告)日： 1987-02-24
- 发明人: Yoshiyuki Osada , Hisanori Tsuda , Masafumi Sano , Satoshi Omata , Katsuji Takasu , Yutaka Hirai
- 申请人： Yoshiyuki Osada , Hisanori Tsuda , Masafumi Sano , Satoshi Omata , Katsuji Takasu , Yutaka Hirai
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX59-210492 19841009
- 主分类号： H01L51/42
- IPC分类号： H01L51/42 ; B05D3/06 ; B05D7/24 ; H01L21/20 ; H01L21/205 ; H01L31/04
摘要：
A method for forming a deposited film comprises forming in a vacuum chamber housing a substrate therein a deposited film containing silicon on the substrate by subjecting a gas represented by the general formula: ##STR1## wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4, can be the same or different and are each independently hydrogen or a hydrocarbon group, to polymerization.
公开/授权文献
- US6089271A Gas relief valve for a container 公开/授权日：2000-07-18
信息查询
IPC分类:
