发明授权
- 专利标题: Negative-type resist sensitive to ionizing radiation
- 专利标题(中): 对电离辐射敏感的负型抗蚀剂
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申请号: US757475申请日: 1985-07-22
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公开(公告)号: US4649099A公开(公告)日: 1987-03-10
- 发明人: Kiyoshi Oguchi
- 申请人: Kiyoshi Oguchi
- 申请人地址: JPX Tokyo
- 专利权人: Dai Nippon Insatsu K.K.
- 当前专利权人: Dai Nippon Insatsu K.K.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX56-161430 19811009
- 主分类号: C08F8/28
- IPC分类号: C08F8/28 ; C08F8/00 ; G03F7/038 ; H01L21/027 ; G03C5/16 ; G03F7/26
摘要:
An acetalized polyvinyl alcohol having a molecular weight of 10,000 to 1,000,000 represented by the formula ##STR1## wherein: R.sup.1 represents a residue of an aldehyde or a ketone the residue having no photosenitivity to ultraviolet rays; R.sup.2 represents a hydrogen atom, which may partially be substituted with an acetyl group; R.sup.3 represents naught or a monomeric unit copolymerizable with vinyl acetate; and l, m, n, are integers indicating polymerization degrees, has excellent characteristics such as high sensitivity, high resolving power and excellent dry etching resistance and is suitable as a negative-type resist in ionizing radiation lithography.
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