发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US754961申请日： 1985-07-15
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公开(公告)号： US4652897A公开(公告)日： 1987-03-24
- 发明人: Kousuke Okuyama , Kazuhiro Komori , Hisao Katto
- 申请人： Kousuke Okuyama , Kazuhiro Komori , Hisao Katto
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX59-144206 19840713
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L29/78 ; H01L29/788 ; H01L29/792
摘要：
A semiconductor memory device wherein a portion of source region of a field-effect transistor that serves as a memory cell has a low impurity concentration, so that hot carriers generated on the source side are injected into the floating gate. Hot carriers are generated by utilizing a large electric field intensity established by the drop of voltage in the region of low impurity concentration. The voltage difference is so great between the source region and the control gate that hot carriers generated on the source side are efficiently injected into the floating gate.
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