发明授权
US4675264A Electrophotographic sensitive member with amorphous Si barrier layer
失效
具有非晶Si阻挡层的电子照相敏感元件
- 专利标题: Electrophotographic sensitive member with amorphous Si barrier layer
- 专利标题(中): 具有非晶Si阻挡层的电子照相敏感元件
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申请号: US885923申请日: 1986-07-15
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公开(公告)号: US4675264A公开(公告)日: 1987-06-23
- 发明人: Takao Kawamura , Hideaki Iwano , Naooki Miyamoto , Yasuo Nishiguchi
- 申请人: Takao Kawamura , Hideaki Iwano , Naooki Miyamoto , Yasuo Nishiguchi
- 申请人地址: JPX Kyoto JPX Kyoto
- 专利权人: Kyocera Corporation,Kawamura; Takao
- 当前专利权人: Kyocera Corporation,Kawamura; Takao
- 当前专利权人地址: JPX Kyoto JPX Kyoto
- 优先权: JPX58-58292 19830401; JPX59-11495 19840124
- 主分类号: G03G5/082
- IPC分类号: G03G5/082 ; G03G5/14
摘要:
The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.
公开/授权文献
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