A dynamic memory obtains reduced leakage currents through the access transistors by preventing the low-going column conductors from reaching zero volts for at least a majority of the duration of the active portion of a memory cycle. The low-going conductors are allowed to reach zero volts during the refresh operation. One advantage is a possible increase in the data storage time between required refresh operations. An increase in the refresh interval is especially useful for memory operations wherein a multiplicity of columns are selected for a given row selection. The present technique also addresses the tendency toward increased sub-threshold leakage as field effect transistor thresholds decrease.