发明授权
- 专利标题： Fabrication of Schottky barrier MOSFETS
- 专利标题（中）： 肖特基势垒MOSFET的制造
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申请号： US872147申请日： 1986-06-09
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公开(公告)号： US4696093A公开(公告)日： 1987-09-29
- 发明人: James D. Welch
- 申请人： James D. Welch
- 专利权人： Welch James D
- 当前专利权人： Welch James D
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/06 ; H01L29/78 ; H01L21/441
摘要：
A method for fabricating MOSFET devices by a one mask, one etch process utilizing vacuum deposited chromium, silicon upon which is grown SiO.sub.2 and an anneal process. An optional optimizing ion implantation and activating anneal step is also disclosed, as are two, and three, mask and etch procedures.
公开/授权文献
- US5901440A Control method of terminal crimping device 公开/授权日：1999-05-11
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