发明授权
US4700465A Method of selectively making contact structures both with barrier metal
and without barrier metal in a single process flow
失效
在单一工艺流程中选择性地制造具有阻挡金属和无屏障金属的接触结构的方法
- 专利标题： Method of selectively making contact structures both with barrier metal and without barrier metal in a single process flow
- 专利标题（中）： 在单一工艺流程中选择性地制造具有阻挡金属和无屏障金属的接触结构的方法
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申请号： US833216申请日： 1986-02-25
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公开(公告)号： US4700465A公开(公告)日： 1987-10-20
- 发明人: Eric R. Sirkin
- 申请人： Eric R. Sirkin
- 申请人地址： CA Santa Clara
- 专利权人： Zoran Corporation
- 当前专利权人： Zoran Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/425 ; H01L29/62
摘要：
A semiconductor structure with ohmic contacts and variable resistance contacts has an interconnection pattern to the contacts including a first barrier metal in contact with the variable resistance contacts and a second metal contacting the barrier metal and the ohmic contacts. The barrier layer protects the amorphotized crystalline structure of the variable resistance contacts. Fabrication processes are described.
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