发明授权
US4711857A Tailorable infrared sensing device with strain layer superlattice
structure
失效
具有应变层超晶格结构的可靠的红外感测装置
- 专利标题： Tailorable infrared sensing device with strain layer superlattice structure
- 专利标题（中）： 具有应变层超晶格结构的可靠的红外感测装置
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申请号： US901114申请日： 1986-08-28
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公开(公告)号： US4711857A公开(公告)日： 1987-12-08
- 发明人: Li-Jen Cheng
- 申请人： Li-Jen Cheng
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- 当前专利权人： The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- 当前专利权人地址： DC Washington
- 主分类号： H01L31/0352
- IPC分类号： H01L31/0352 ; H01L31/101 ; H01L31/04 ; H01L29/12 ; H01L31/06
摘要：
An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.
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