发明授权
- 专利标题： Structure for contacting a narrow width PN junction region
- 专利标题（中）： 用于接触窄宽度PN结区域的结构
-
申请号： US661999申请日： 1984-10-18
-
公开(公告)号： US4712125A公开(公告)日： 1987-12-08
- 发明人: Harsaran S. Bhatia , Satyapal S. Bhatia , Jacob Riseman , Emmanuel A. Valsamakis
- 申请人： Harsaran S. Bhatia , Satyapal S. Bhatia , Jacob Riseman , Emmanuel A. Valsamakis
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L21/60 ; H01L23/485 ; H01L29/735 ; H01L29/04
摘要：
A method and resulting structure for making contact to a narrow width PN junction region in any desired semiconductor body is described. A substantially vertical conformal conductive layer is formed over the desired PN junction region. The body is heated at a suitable temperature to cause a dopant to diffuse from the vertical conductive layer into the semiconductor body to form the narrow width PN junction region. A substantially horizontal conductive layer makes contact to the substantially vertical layer so as to have the horizontal conductive layer in electrical contact to the PN junction region. Electrical contact can be made to the horizontal conductive layer at any convenient location. A lateral PNP transistor is one type of very small device that can be made using the method of the present invention.
公开/授权文献
信息查询
IPC分类:
