发明授权
US4716127A Method of implanting spatially controlled P-N junctions by focused ion
beams containing at least two species
失效
通过包含至少两种物种的聚焦离子束注入空间控制的P-N结的方法
- 专利标题： Method of implanting spatially controlled P-N junctions by focused ion beams containing at least two species
- 专利标题（中）： 通过包含至少两种物种的聚焦离子束注入空间控制的P-N结的方法
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申请号： US852317申请日： 1986-04-15
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公开(公告)号： US4716127A公开(公告)日： 1987-12-29
- 发明人: Shoji Shukuri , Masao Tamura , Yasuo Wada , Yoshihisa Fujisaki
- 申请人： Shoji Shukuri , Masao Tamura , Yasuo Wada , Yoshihisa Fujisaki
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX60-78347 19850415
- 主分类号： H01J37/317
- IPC分类号： H01J37/317 ; H01L21/265 ; H01L21/8252 ; G01N23/00
摘要：
A desired part of a workpiece is irradiated with a focused ion beam which contains at least two species of impurity ions to-be-implanted exhibiting different spacial distributions of ion current densities.Thus, regions respectively implanted with different species of impurity ions can be formed in a predetermined positional relationship at high precision.