An internal-reflection-interference semiconductor laser device comprising a first laser operation area ranging from one facet to the internal reflecting section and a second laser operation area ranging from the other facet to the internal reflecting section, wherein when the internal-cavity length l.sub.1 of the first laser operation area is shorter than the internal-cavity length l.sub.2 of the second laser operation area, the reflectivity R.sub.1 at the facet on the side of the first laser operation area is smaller than the reflectivity R.sub.2 at the facet on the side of the second laser operation area.