发明授权
US4725148A Turbidimeter employing a semiconductor laser diode and a photodiode
失效
浊度计采用半导体激光二极管和光电二极管
- 专利标题： Turbidimeter employing a semiconductor laser diode and a photodiode
- 专利标题（中）： 浊度计采用半导体激光二极管和光电二极管
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申请号： US739319申请日： 1985-05-30
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公开(公告)号： US4725148A公开(公告)日： 1988-02-16
- 发明人: Isao Endo , Teruyuki Nagamune , Ichiro Inoue , Kozo Inoue , Tadashi Nohira , Ikuzo Kagami , Tatsuya Iwakura
- 申请人： Isao Endo , Teruyuki Nagamune , Ichiro Inoue , Kozo Inoue , Tadashi Nohira , Ikuzo Kagami , Tatsuya Iwakura
- 申请人地址： JPX Tokyo JPX Wako JPX Hino
- 专利权人： Komatsugawa Chemical Engineering Co., Ltd.,Rikagaku Kenkyusho,Fuji Facom Corporation
- 当前专利权人： Komatsugawa Chemical Engineering Co., Ltd.,Rikagaku Kenkyusho,Fuji Facom Corporation
- 当前专利权人地址： JPX Tokyo JPX Wako JPX Hino
- 优先权： JPX59-115409 19840607
- 主分类号： G01N21/59
- IPC分类号： G01N21/59 ; G01N21/53 ; G01N21/85 ; G01N21/84
摘要：
In a turbidimeter for measuring a turbidity of a test solution to be measured i.e. culture solution in a fermentation apparatus, a semiconductor laser diode and a semiconductor photodiode are integrally arranged in a detection portion of the turbidimeter in such a manner that a laser beam emitted from the semiconductor laser diode is made incident upon the semiconductor photodiode through the test solution. Moreover, a protection circuit for the semiconductor laser diode and the semiconductor photodiode is also arranged in the turbidimeter to cut off a current flowed therethrough when an environmental temperature becomes above a predetermined temperature. Therefore, the turbidimeter can be made small in size and light in weight, and the turbidity can be measured accurately over wide range.
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