发明授权
- 专利标题： Travelling-wave microwave device
- 专利标题（中）： 行波微波设备
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申请号： US885908申请日： 1986-07-15
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公开(公告)号： US4733195A公开(公告)日： 1988-03-22
- 发明人: Hua Q. Tserng , Bumman Kim
- 申请人： Hua Q. Tserng , Bumman Kim
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L21/338
- IPC分类号： H01L21/338 ; H01L29/812 ; H03F3/60
摘要：
A travelling-wave transistor structure (50) with the input and output transmission lines (54,58) terminated with unmatched impedances (70,72,74;80,82,84) to improve high-frequency response by reflection and phase shift to provide constructive interference is disclosed. Preferred embodiments include a .pi.-gate (52,56) MESFET structure travelling-wave transistor with many periodically spaced gate feeding fingers (56) connecting gate (52) to gate transmission line (54) which parallels gate (52). This provides a compact structure and has large advantages at millimeter wave frequencies. Source (60) may be grounded by vias (61) or may pass over gate transmission line (54) by air bridges to a ground on the same surface as the MESFET.
公开/授权文献
- US5986981A Disk reproducing apparatus housing a plurality of disks 公开/授权日：1999-11-16