发明授权
- 专利标题: Compound resonator type semiconductor laser device
- 专利标题(中): 复合谐振器型半导体激光器件
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申请号: US734091申请日: 1985-05-15
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公开(公告)号: US4737962A公开(公告)日: 1988-04-12
- 发明人: Saburo Yamamoto , Hiroshi Hayashi , Nobuyuki Miyauchi , Shigeki Maei , Taiji Morimoto
- 申请人: Saburo Yamamoto , Hiroshi Hayashi , Nobuyuki Miyauchi , Shigeki Maei , Taiji Morimoto
- 申请人地址: JPX Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JPX Osaka
- 优先权: JPX59-99319 19840516; JPX59-105373 19840523
- 主分类号: H01S3/082
- IPC分类号: H01S3/082 ; H01S5/028 ; H01S5/062 ; H01S5/10 ; H01S5/24 ; H01S5/40 ; H01S3/19 ; H01S3/10
摘要:
A compound resonator type semiconductor laser device comprising a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that of the resonator in the first laser operation area; and an electric current feeder for injecting a current into said multiple-layered crystal structure, and wherein said facet of the resonator in the first laser operation area, which is shared with the facet of the resonator in the second laser operation area, is covered with a protective film to attain a high reflectivity therein, the other facet of the resonator in the first laser operation area is covered with a protective film to attain a low reflectivity therein, and the other facet of the resonator in the second laser operation area is covered with a protective film to attain a high reflectivity therein.
公开/授权文献
- US5679117A Refining process and apparatus 公开/授权日:1997-10-21
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