发明授权
- 专利标题: Antireflection film
- 专利标题(中): 防反射膜
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申请号: US783090申请日: 1985-10-02
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公开(公告)号: US4738497A公开(公告)日: 1988-04-19
- 发明人: Takeo Miyata , Takuhiro Ono , Takashi Iwabuchi , Masaru Ikedo , Masafumi Watari
- 申请人: Takeo Miyata , Takuhiro Ono , Takashi Iwabuchi , Masaru Ikedo , Masafumi Watari
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX59-209107 19841005; JPX59-239842 19841114
- 主分类号: G02B1/11
- IPC分类号: G02B1/11 ; G02B6/10 ; G02B6/24 ; G02B6/34 ; G02B13/14 ; G02B5/28
摘要:
An antireflection film composed of a layer of arsenic triselenide having an optical thickness in the range between 2.518 and 2.783 .mu.m, a layer of potassium chloride having an optical thickness in the range between 1.151 and 1.272 .mu.m and a layer of arsenic triselenide having an optical thickness in the range between 0.577 and 0.749 .mu.m which are successively formed on a member of infrared radiation transmitting material formed of a mixture of thalium iodide and thalium bromide. The member provided with the three-layer antireflection film is used in an atmosphere of protective gas, such as dry air or dry N.sub.2 gas.
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