发明授权
- 专利标题： Semiconductor laser device with a diffraction grating
- 专利标题（中）： 具有衍射光栅的半导体激光器件
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申请号： US789787申请日： 1985-10-21
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公开(公告)号： US4745615A公开(公告)日： 1988-05-17
- 发明人: Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
- 申请人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX59-223576 19841022
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/042 ; H01S5/12 ; H01S5/32 ; H01S5/323 ; H01S3/19
摘要：
A semiconductor laser device for laser oscillation at a wavelength in the range of from 660 nm to 890 nm which includes an active layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) or In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (0.51.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, and z=2.04y-1.04) and a layer with a diffraction grating thereon of In.sub.1-y Ga.sub.y P.sub.1-z As (z=2.04y-1.04) which is adjacent to the active layer.
公开/授权文献
- US5944689A Variable curve electrophysiology catheter 公开/授权日：1999-08-31
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