发明授权
- 专利标题： Redundant circuit of semiconductor device and method of producing same
- 专利标题（中）： 半导体器件的冗余电路及其制造方法
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申请号： US916632申请日： 1986-10-08
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公开(公告)号： US4748491A公开(公告)日： 1988-05-31
- 发明人: Hiroshi Takagi
- 申请人： Hiroshi Takagi
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX60-226518 19851009
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L21/00 ; H01L21/268 ; H01L23/525 ; H01L27/02
摘要：
A redundant circuit of a semiconductor device comprises a fuse (73) for laser trimming to connect between aluminum interconnections (6). The fuse (73) has a two-layer structure comprising a first film (3a) of polysilicon and a second film (7a) formed on the film (3a) of metal silicide, the line width l.sub.0 of the first film (3a) being shorter than the line width l.sub.1 of the second layer (7a). In addition, a PSG film (4) is formed to cover the fuse (73), and the laser beam is irradiated on the PSG film (4) in disconnecting the fuse (73). Accordingly, the first film (3a) having a short line width is uniformly fused and expanded, the fuse (73) is uniformly disconnected, and an opening (10) formed after explosion and splash thereof becomes smaller.
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