Invention Grant
- Patent Title: Photothermal oscillator force sensor
- Patent Title (中): 光热振荡器力传感器
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Application No.: US940319Application Date: 1986-12-10
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Publication No.: US4772786APublication Date: 1988-09-20
- Inventor: Roger M. Langdon
- Applicant: Roger M. Langdon
- Applicant Address: GB2 London
- Assignee: The General Electric Company, p.l.c.
- Current Assignee: The General Electric Company, p.l.c.
- Current Assignee Address: GB2 London
- Priority: GBX8530809 19851213
- Main IPC: G01L1/24
- IPC: G01L1/24 ; G01D5/26 ; G01H9/00 ; G01K5/52 ; G01L1/10 ; G01L1/18 ; G01L9/00 ; G01L11/02 ; G01P15/093 ; G01D5/34
Abstract:
A sensor comprises a beam, e.g. of silicon, which resonates at a frequency dependent on the force imposed on the beam. Light on a line induces resonance of the beam by means of the photothermal effect. The light reflected from the beam is amplitude modulated at the resonance frequency, and returns along the line. It is reflected by a semi-reflecting plane mirror onto a lens which focusses it onto a photodetector. The photodetector produces an output voltage modulated at the oscillation frequency, and is thus representative of the force imposed on beam 1.
Public/Granted literature
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