发明授权
- 专利标题： Method of manufacturing power MOSFET
- 专利标题（中）： 功率MOSFET的制造方法
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申请号： US136770申请日： 1987-12-22
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公开(公告)号： US4777149A公开(公告)日： 1988-10-11
- 发明人: Hirohito Tanabe , Yu Ohata , Kazuaki Suzuki , Yukiharu Miwa , Yoshihito Nakayama
- 申请人： Hirohito Tanabe , Yu Ohata , Kazuaki Suzuki , Yukiharu Miwa , Yoshihito Nakayama
- 申请人地址： JPX Kanagawa
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX58-192310 19831017
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/167 ; H01L29/78 ; H01L21/383
摘要：
In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree.C.
公开/授权文献
- US5955065A Antiperspirant compositions containing calcium salts 公开/授权日：1999-09-21
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