发明授权
- 专利标题: Method for growing a single crystal of compound semiconductor
- 专利标题(中): 生长化合物半导体单晶的方法
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申请号: US11428申请日: 1987-02-03
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公开(公告)号: US4783235A公开(公告)日: 1988-11-08
- 发明人: Mikio Morioka , Atsushi Shimizu
- 申请人: Mikio Morioka , Atsushi Shimizu
- 申请人地址: JPX Osaka
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX59-150900 19840720
- 主分类号: C30B27/02
- IPC分类号: C30B27/02 ; C30B15/30 ; C30B29/40 ; C30B29/42 ; H01L21/208 ; C30B15/22
摘要:
An improvement of LEC methods. Highly impurity doped single crystal often suffers from impurity precipitation. The cause of the occurrence of impurity precipitation is supposed to be the supercooling. To avoid the occurrence of supercooling the pulling speed is slowly lowered during the crystal growth in the LEC methods. The beginning of the occurrence of impurity precipitation is delayed by lowering the pulling speed. Additional application of magnetic field is more effective.
公开/授权文献
- US5942150A Use as antifreeze of polymers with recurring succinyl units 公开/授权日:1999-08-24