发明授权
- 专利标题： Method of making a semiconductor device involving simultaneous connection and disconnection
- 专利标题（中）： 制造涉及同时连接和断开的半导体器件的方法
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申请号： US834101申请日： 1986-02-21
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公开(公告)号： US4783424A公开(公告)日： 1988-11-08
- 发明人: Jun-ichi Ohno , Satoshi Konishi
- 申请人： Jun-ichi Ohno , Satoshi Konishi
- 申请人地址： JPX Kawasaki
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX138829 19810903; JPX60537 19820412
- 主分类号： G11C17/16
- IPC分类号： G11C17/16 ; H01L21/82 ; H01L23/525 ; H01L21/265
摘要：
A semiconductor device comprising a first conductor having first and second portions which are electrically disconnected from each other, and a second conductor, formed on an insulating film separating it from the first conductor, which is electrically conductive. A radiated energy beam renders the second conductor non-conductive, while simultaneously electrically connecting the first and second portions, rendering the first conductor conductive, as needed.
公开/授权文献
- USD348112S Flashlight 公开/授权日：1994-06-21
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