发明授权
- 专利标题： Method of manufacturing a semiconductor apparatus
- 专利标题（中）： 制造半导体装置的方法
-
申请号： US073473申请日： 1987-07-15
-
公开(公告)号： US4791074A公开(公告)日： 1988-12-13
- 发明人: Yoshitaka Tsunashima , Keisaku Yamada , Takako Kashio
- 申请人： Yoshitaka Tsunashima , Keisaku Yamada , Takako Kashio
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX61-201703 19860829; JPX61-231763 19860930
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L21/385
摘要：
According to the present invention, a method of manufacturing a semiconductor apparatus is provided which comprises the steps of (a) depositing a boron layer on a silicon substrate, and (b) thermally diffusing boron from said boron layer into said silicon substrate. The present invention, which is characteristically based on the solid phase diffusion process, enables even a thin layer to be deposited. Further, unlike the ion implantation process, the present invention enables an impurity to be uniformly diffused even into an inclined plane. Unlike the case where boron-containing glass is used as a diffusion source, the invention enables a sufficient amount of boron to be diffused even at a temperature lower than 1000.degree. C.
公开/授权文献
- US6156224A Working fluid containing perfluorodimethylether 公开/授权日：2000-12-05
信息查询
IPC分类:
