发明授权
- 专利标题： Semiconductor laser
- 专利标题（中）： 半导体激光器
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申请号： US839869申请日： 1986-03-13
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公开(公告)号： US4803690A公开(公告)日： 1989-02-07
- 发明人: Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
- 申请人： Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX60-52606 19850315
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/12 ; H01S3/09 ; H01S3/08
摘要：
A semiconductor laser comprising a triple-layered structure composed of an active layer for laser oscillation and a pair of optical guiding layers sandwiching said active layer therebetween, wherein the refractive index of each of said optical guiding layers is smaller than that of said active layer, and the bandgap of each of said optical guiding layers is greater than that of said active layer, and moreover diffraction gratings with different pitches are positioned on the outer side of each of said optical guiding layers.
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