发明授权
- 专利标题： Plasma processing method and apparatus for carrying out the same
- 专利标题（中）： 等离子体处理方法及其执行装置
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申请号： US662014申请日： 1984-10-18
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公开(公告)号： US4808258A公开(公告)日： 1989-02-28
- 发明人: Toru Otsubo , Susumu Aiuchi , Takashi Kamimura , Minoru Noguchi , Teru Fujii
- 申请人： Toru Otsubo , Susumu Aiuchi , Takashi Kamimura , Minoru Noguchi , Teru Fujii
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX58-194311 19831019; JPX59-133117 19840629
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; C23C16/517 ; H01J37/32 ; C23F1/02 ; H01L21/306
摘要：
A plasma processing method and an apparatus for carrying out the method in which a processing gas is introduced into a processing chamber, and periodically an amplitude modulated or frequency-modulated high-frequency voltage is applied to plasma generating means, to generate a discharge plasma and to carry out predetermined processing by the plasma.
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