发明授权
US4829534A Semiconductor laser device having a semiconductor region for creating a
depletion layer in a laser active layer for controlling current flow
therethrough
失效
半导体激光器件具有半导体区域，用于在激光有源层中形成用于控制电流流过的耗尽层
- 专利标题： Semiconductor laser device having a semiconductor region for creating a depletion layer in a laser active layer for controlling current flow therethrough
- 专利标题（中）： 半导体激光器件具有半导体区域，用于在激光有源层中形成用于控制电流流过的耗尽层
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申请号： US814772申请日： 1985-12-30
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公开(公告)号： US4829534A公开(公告)日： 1989-05-09
- 发明人: Seiichi Miyazawa , Hidetoshi Nojiri , Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Isao Hakamada
- 申请人： Seiichi Miyazawa , Hidetoshi Nojiri , Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Isao Hakamada
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX60-423 19850108
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/026 ; H01S5/042 ; H01S5/20
摘要：
A semiconductor laser device wherein a depletion layer is formed in a laser activation layer by biasing the laser device and a third terminal controls an injection current flowing between first and second terminals of the device.