发明授权
- 专利标题: Process for the passivation of crystal defects
- 专利标题(中): 钝化晶体缺陷的过程
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申请号: US107442申请日: 1987-10-13
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公开(公告)号: US4835006A公开(公告)日: 1989-05-30
- 发明人: Heinrich Grasser , Adolf Muenzer
- 申请人: Heinrich Grasser , Adolf Muenzer
- 申请人地址: DEX Berlin and Munich
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: DEX Berlin and Munich
- 优先权: DEX3636340 19861024
- 主分类号: B01J19/08
- IPC分类号: B01J19/08 ; C30B31/22 ; C30B33/00 ; C30B33/04 ; H01L21/30 ; H01L31/18
摘要:
A process for the passivation of crystal defects or grain boundaries or internal grain defects or surfaces in an electrically conductive material in a plasma, where the passivation is carried out by the influence of suitable ions on the electrically conductive material to facilitate a shorter process time and lower stress on the electrically conductive material. A high-frequency gas discharge plasma is acted upon by a superimposed d.c. voltage which serves to accelerate the ions, suitable to carry out the passivation, towards the electrically conductive material.
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