发明授权
- 专利标题： Three-state bidirectional buffer
- 专利标题（中）： 三态双向缓冲区
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申请号： US121542申请日： 1987-11-17
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公开(公告)号： US4835418A公开(公告)日： 1989-05-30
- 发明人: Hung-Cheng Hsieh
- 申请人： Hung-Cheng Hsieh
- 申请人地址： CA San Jose
- 专利权人： Xilinx, Inc.
- 当前专利权人： Xilinx, Inc.
- 当前专利权人地址： CA San Jose
- 主分类号： H03K5/02
- IPC分类号： H03K5/02 ; H03K19/094
摘要：
A bidirectional buffer having a high impedance state is provided. This buffer is used for amplifying a signal as it is passed from one transmission line to another when it is desirable to select which direction the signal will flow. A switching circuit controls which transmission line is connected to the input terminal of the buffer and which is connected to the output terminal. A high impedance state is also provided for disconnecting the two transmission lines. Two memory cells control the direction of signal flow and the high impedance state.
公开/授权文献
- US6163079A Structure of electric equipment for vehicle 公开/授权日：2000-12-19
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