发明授权
US4835583A Semiconductor device having strained superlattice buffer layers with
In-doped GaAs substrate
失效
具有掺杂GaAs衬底的具有应变超晶格缓冲层的半导体器件
- 专利标题： Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate
- 专利标题（中）： 具有掺杂GaAs衬底的具有应变超晶格缓冲层的半导体器件
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申请号： US895913申请日： 1986-08-13
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公开(公告)号： US4835583A公开(公告)日： 1989-05-30
- 发明人: Makoto Morioka , Tomoyoshi Mishima , Kenji Hiruma , Yoshifumi Katayama , Yasuhiro Shiraki
- 申请人： Makoto Morioka , Tomoyoshi Mishima , Kenji Hiruma , Yoshifumi Katayama , Yasuhiro Shiraki
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX60-189651 19850830; JPX61-46113 19860305
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
An epitaxial crystal grown layer structure which permits, on an In-doped GaAs substrate, which will be industrially used in large quantities, the growth of an epitaxial layer having the same good quality as the epitaxial layer grown on an undoped GaAs substrate.
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