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US4837186A Silicon semiconductor substrate with an insulating layer embedded therein and method for forming the same 失效
其中嵌有绝缘层的硅半导体衬底及其形成方法

Silicon semiconductor substrate with an insulating layer embedded therein and method for forming the same
摘要：
A silicon semiconductor substrate includes an insulating layer embedded therein. The silicon semiconductor substrate comprises a first silicon plate, an insulating layer embedded in the first silicon plate so that the surfaces of the silicon plate and the insulating layer are in a mirror surface, and a second silicon plate united with the first silicon plate and the insulating layer at the mirror surface of the first silicon plate and the insulating layer. The insulating layer is used for forming an isolated region in the second silicon plate.
摘要（中）：

硅半导体衬底包括嵌入其中的绝缘层。 硅半导体衬底包括第一硅板，嵌入在第一硅板中的绝缘层，使得硅板和绝缘层的表面在镜面中，并且第二硅板与第一硅板和 第一硅板的镜面上的绝缘层和绝缘层。 绝缘层用于在第二硅板中形成隔离区域。

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