发明授权
US4841485A Read/write memory device with an embedded read-only pattern and method
for providing same
失效
具有嵌入式只读模式的读/写存储器件及其提供方法
- 专利标题: Read/write memory device with an embedded read-only pattern and method for providing same
- 专利标题(中): 具有嵌入式只读模式的读/写存储器件及其提供方法
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申请号: US116818申请日: 1987-11-05
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公开(公告)号: US4841485A公开(公告)日: 1989-06-20
- 发明人: Ronald J. Prilik , James R. Varner
- 申请人: Ronald J. Prilik , James R. Varner
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G11C7/20 ; G11C11/41 ; G11C11/413 ; G11C29/34 ; G11C29/36
摘要:
A memory array device with an embedded self-test binary pattern. The device has an array of bistable cells formed with first and second sides that are oppositely connected to a first voltage line or a second voltage line. If the first and second voltage lines are energized at the same voltage level, each of the bistable cells will function in a normal bistable mode. If the first and second voltage lines are energized at different levels, each of the bistable cells will function in an embedded binary pattern mode.
公开/授权文献
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