发明授权
- 专利标题: Ion source device
- 专利标题(中): 离子源装置
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申请号: US942635申请日: 1986-12-17
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公开(公告)号: US4847476A公开(公告)日: 1989-07-11
- 发明人: Tadashi Sato , Yasunori Ohno , Tomoe Kurosawa , Nobuya Sekimoto , Yoshimi Hakamata , Yukio Kurosawa , Kunio Hirasawa
- 申请人: Tadashi Sato , Yasunori Ohno , Tomoe Kurosawa , Nobuya Sekimoto , Yoshimi Hakamata , Yukio Kurosawa , Kunio Hirasawa
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX61-138092 19860616
- 主分类号: H01L21/265
- IPC分类号: H01L21/265 ; H01J27/08 ; H01J27/14
摘要:
An ion source device comprises a plasma generating vessel for generating plasma therein, a plurality of magnets arranged on an outer periphery of the plasma generating vessel to establish a cusp field in the plasma generating vessel, means for supplying a power to generate the plasma in the plasma generating vessel, and an anode electrode arranged on an inner wall of the plasma generating vessel and adapted to be heated by electrons emitted from the plasma and maintain the heat.
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