发明授权
- 专利标题: Method of making semi-conductor diffusion furnace components
- 专利标题(中): 制造半导体扩散炉部件的方法
-
申请号: US225028申请日: 1988-07-27
-
公开(公告)号: US4863657A公开(公告)日: 1989-09-05
- 发明人: Takashi Tanaka , Yoshiyuki Watanabe
- 申请人: Takashi Tanaka , Yoshiyuki Watanabe
- 申请人地址: JPX Tokyo
- 专利权人: Toshiba Ceramics Co., Ltd.
- 当前专利权人: Toshiba Ceramics Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX60-149346 19850709
- 主分类号: C04B35/573
- IPC分类号: C04B35/573 ; C04B35/626 ; C30B31/10 ; C30B31/14 ; C30B35/00 ; H01L21/22
摘要:
A sintered silicon carbide matrix component for a semi-conductor diffusion furnace results from sintering a mixture of three types of silicon carbide powder. The mixture includes fine silicon carbide having an average particle size of 0.1-10 microns, intermediate silicon carbide having an average particle size of 12-30 microns and coarse silicon carbide having an average particle size of 40-200 microns. The difference between the average particle sizes of the three types of powder is at least 10 microns.
公开/授权文献
- US4379648A Fixing structure for radiator grille 公开/授权日:1983-04-12
信息查询
IPC分类: