发明授权
US4870539A Doped titanate glass-ceramic for grain boundary barrier layer capacitors
失效
用于晶界势垒层电容器的掺杂钛酸盐玻璃陶瓷
- 专利标题: Doped titanate glass-ceramic for grain boundary barrier layer capacitors
- 专利标题(中): 用于晶界势垒层电容器的掺杂钛酸盐玻璃陶瓷
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申请号: US297907申请日: 1989-01-17
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公开(公告)号: US4870539A公开(公告)日: 1989-09-26
- 发明人: Dudley A. Chance , Yung-Haw Hu
- 申请人: Dudley A. Chance , Yung-Haw Hu
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: C03C10/02
- IPC分类号: C03C10/02 ; C04B35/468 ; C04B35/47 ; H01G4/12
摘要:
A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO.sub.3 and/or SrTiO.sub.3 on the order of about 0.5-10.0 .mu.m surrounded by a thin microcrystalline insulating barrier layer at the grain boundary about 0.01-0.10 .mu.m thick wherein the conductivity of the grains is enhanced by addition of about 0.1-4.0 mol % of a dopant selected from among Group V elements, Ge and Si substantially incorporated in the bulk lattice of the grains upon Ti sites. A novel process for forming the glass-ceramic material is also disclosed.
公开/授权文献
- US4406142A Annular corrugator 公开/授权日:1983-09-27
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