发明授权
- 专利标题： Semiconductor laser device having a grating structure
- 专利标题（中）： 具有光栅结构的半导体激光器件
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申请号： US239301申请日： 1988-09-01
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公开(公告)号： US4872174A公开(公告)日： 1989-10-03
- 发明人: Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
- 申请人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX62-219719 19870902
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/12 ; H01S5/125 ; H01S5/20 ; H01S5/223 ; H01S5/323 ; H01S5/40
摘要：
A semiconductor laser device comprises a laminated crystal structure which includes a Ga.sub.1-y Al.sub.y As optical guiding layer and a Ga.sub.1-z Al.sub.z As (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga.sub.1-x Al.sub.2 As (0.ltoreq.x.ltoreq.0.1 and x
公开/授权文献
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