发明授权
US4879584A Semiconductor device with isolation between MOSFET and control circuit
失效
MOSFET与控制电路之间隔离的半导体器件
- 专利标题： Semiconductor device with isolation between MOSFET and control circuit
- 专利标题（中）： MOSFET与控制电路之间隔离的半导体器件
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申请号： US154275申请日： 1988-02-10
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公开(公告)号： US4879584A公开(公告)日： 1989-11-07
- 发明人: Yosuke Takagi , Yu Ohata , Koichi Kitahara , Tsuyoshi Kuramoto
- 申请人： Yosuke Takagi , Yu Ohata , Koichi Kitahara , Tsuyoshi Kuramoto
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX62-29553 19870213
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/8238 ; H01L21/8249 ; H01L27/06 ; H01L27/088 ; H01L27/092 ; H01L29/78
摘要：
A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.
公开/授权文献
- US5386411A Recordable optical disk and method of manufacturing the same 公开/授权日：1995-01-31
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