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US4899201A Electronic and optoelectric devices utilizing light hole properties 失效
电子和光电器件利用光孔性能

Electronic and optoelectric devices utilizing light hole properties
摘要:
Improved p-channel FETs and optoelectronic devices make use of reduced hole effective mass achieved with quantum confinement. The devices include multiple one-dimensional p-channel FETs which have electrically induced and controllable one dimensional p-type semiconductor wires; square well two-dimensional p-channel FETs; and laser diodes and light emitting diodes which use one dimensional p-type semiconductor wires.
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