发明授权
US4901127A Circuit including a combined insulated gate bipolar transistor/MOSFET
失效
电路包括组合绝缘栅双极晶体管/ MOSFET
- 专利标题： Circuit including a combined insulated gate bipolar transistor/MOSFET
- 专利标题（中）： 电路包括组合绝缘栅双极晶体管/ MOSFET
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申请号： US254897申请日： 1988-10-07
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公开(公告)号： US4901127A公开(公告)日： 1990-02-13
- 发明人: Tat-Sing P. Chow , Bantval J. Baliga
- 申请人： Tat-Sing P. Chow , Bantval J. Baliga
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/739 ; H01L29/78
摘要：
An IGBT and FET are integrated in a common semiconductor body and share common source/emitter, base and drift regions and an insulated gate electrode. The ON-resistance and turn-off time of this device can be controlled by connecting the drain and collector electrodes to one main terminal for the device with a resistor between either the drain region/drift region interface or the collector junction and the main terminal of the device.
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