发明授权
- 专利标题： Semiconductor element
- 专利标题（中）： 半导体元件
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申请号： US188677申请日： 1988-04-29
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公开(公告)号： US4905072A公开(公告)日： 1990-02-27
- 发明人: Toshiyuki Komatsu , Yutaka Hirai , Katsumi Nakagawa , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
- 申请人： Toshiyuki Komatsu , Yutaka Hirai , Katsumi Nakagawa , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX56-182652 19811113; JPX56-182653 19811113; JPX56-182654 19811113
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L29/04
摘要：
A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).
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