发明授权
- 专利标题： Photoelectron beam converting device and method of driving the same
- 专利标题（中）： 光电子束转换装置及其驱动方法
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申请号： US331007申请日： 1989-03-28
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公开(公告)号： US4906894A公开(公告)日： 1990-03-06
- 发明人: Mamoru Miyawaki , Yukio Masuda , Ryuichi Arai , Nobutoshi Mizusawa , Takahiko Ishiwatari , Hitoshi Oda
- 申请人： Mamoru Miyawaki , Yukio Masuda , Ryuichi Arai , Nobutoshi Mizusawa , Takahiko Ishiwatari , Hitoshi Oda
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX61-141234 19860619; JPX61-141235 19860619; JPX61-141236 19860619
- 主分类号： H01J1/34
- IPC分类号： H01J1/34
摘要：
A photoelectron beam converting device including a semiconductor substrate having a p-n junction formed between an n-type region and a p-type region and an opening portion formed on the side of the semiconductor substrate. An electron beam is generated by a light which enters from the opening portion and by a reverse voltage to be applied to the p-n junction.
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