发明授权
- 专利标题： MOS field effect transistor device with buried channel
- 专利标题（中）： MOS场效应晶体管器件具有埋入通道
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申请号： US78987申请日： 1987-07-29
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公开(公告)号： US4916500A公开(公告)日： 1990-04-10
- 发明人: Yoshiaki Yazawa , Atsuo Watanabe , Atsushi Hiraishi , Masataka Minami , Takahiro Nagano
- 申请人： Yoshiaki Yazawa , Atsuo Watanabe , Atsushi Hiraishi , Masataka Minami , Takahiro Nagano
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX61-178889 19860731
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/78 ; H01L29/786 ; H01L29/808
摘要：
The present invention relates to a semiconductor device comprising a semiconductor substrate of a first conductivity type or an insulator, a source comprising an impurity layer of a second conductivity type disposed on said semiconductor substrate or said insulator, a drain comprising an impurity layer of the second conductivity type disposed on said semiconductor substrate or said insulator, an impurity layer of the first conductivity type formed between said source and said drain, a gate formed on said impurity layer of the first conductivity type via an insulation film, and an impurity layer of the second conductivity type having an impurity concentration lower than that of said source and said drain, said impurity layer of the second conductivity type being disposed between said source, said drain and said impurity layer of the first conductivity type, and said semiconductor substrate of the first conductivity type or said insulator.
公开/授权文献
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