发明授权
- 专利标题： Thin film mesa transistor of field effect type with superlattice
- 专利标题（中）： 具超晶格的场效应薄膜台面晶体管
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申请号： US170101申请日： 1988-03-11
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公开(公告)号： US4916510A公开(公告)日： 1990-04-10
- 发明人: Masafumi Sano , Katsuji Takasu , Hisanori Tsuda , Yutaka Hirai
- 申请人： Masafumi Sano , Katsuji Takasu , Hisanori Tsuda , Yutaka Hirai
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX60-133004 19850620
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L27/12 ; H01L29/15 ; H01L29/786
摘要：
A thin film mesa type FET having a gate electrode formed on a substrate. An insulating thin film layer is formed on the gate electrode. A multilayer structure is formed on the insulating thin film layer by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline insulating material layers. The thickness of the semiconductor layers is 5 to 500 .ANG..
公开/授权文献
- US5418485A Clock signal conditioning circuit 公开/授权日：1995-05-23
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