发明授权
- 专利标题： Submicron dimension compound semiconductor fabrication using thermal etching
- 专利标题（中）： 亚微米尺寸化学半导体制造采用热蚀刻
-
申请号： US183489申请日： 1988-04-15
-
公开(公告)号： US4920069A公开(公告)日： 1990-04-24
- 发明人: Eric R. Fossum , Peter D. Kirchner , George D. Pettit , Alan C. Warren , Jerry M. Woodall
- 申请人： Eric R. Fossum , Peter D. Kirchner , George D. Pettit , Alan C. Warren , Jerry M. Woodall
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/263
摘要：
Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.
公开/授权文献
- US6107834A Charge sharing protection for domino circuits 公开/授权日：2000-08-22