发明授权
- 专利标题： Method for forming deposited film
- 专利标题（中）： 沉积膜形成方法
-
申请号： US786700申请日： 1985-10-11
-
公开(公告)号： US4921722A公开(公告)日： 1990-05-01
- 发明人: Yoshiyuki Osada , Hisanori Tsuda , Masafumi Sano , Satoshi Omata , Katsuji Takasu , Yutaka Hirai
- 申请人： Yoshiyuki Osada , Hisanori Tsuda , Masafumi Sano , Satoshi Omata , Katsuji Takasu , Yutaka Hirai
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX59-211460 19841011
- 主分类号： H01L31/04
- IPC分类号： H01L31/04 ; C23C16/24 ; C23C16/452 ; H01L21/205 ; H01L21/263
摘要：
A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si.sub.n H.sub.m wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.
公开/授权文献
- US4097506A Cis-13,9-deoxy-PGF.sub.1 compounds 公开/授权日：1978-06-27
信息查询
IPC分类:
