发明授权
US4933740A Insulated gate transistor with vertical integral diode and method of
fabrication
失效
具有垂直积分二极管的绝缘栅晶体管及其制造方法
- 专利标题： Insulated gate transistor with vertical integral diode and method of fabrication
- 专利标题（中）： 具有垂直积分二极管的绝缘栅晶体管及其制造方法
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申请号： US243211申请日： 1988-09-09
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公开(公告)号： US4933740A公开(公告)日： 1990-06-12
- 发明人: Bantval J. Baliga , Andrew L. Robinson
- 申请人： Bantval J. Baliga , Andrew L. Robinson
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/739
摘要：
An improved lateral insulated gate transistor includes a dual function anode and employs specially configured anode and cathode regions within the drift layer to promote lateral current flow. A vertical diode is disposed between a substrate cathode and anode of the device. Under forward bias conditions, the device exhibits insulated gate controlled conduction, and under reverse bias conditions, the device exhibits conduction between the substrate cathode and anode of the vertical diode.
公开/授权文献
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