发明授权
- 专利标题: Double-heterostructure semiconductor with mesa stripe waveguide
- 专利标题(中): 双异质结半导体与台面条纹波导
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申请号: US279816申请日: 1988-12-05
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公开(公告)号: US4949349A公开(公告)日: 1990-08-14
- 发明人: Yasuo Ohba , Niyoko Watanabe , Hideto Sugawara , Masayuki Ishikawa , Yukio Watanabe , Motoyuki Yamamoto
- 申请人: Yasuo Ohba , Niyoko Watanabe , Hideto Sugawara , Masayuki Ishikawa , Yukio Watanabe , Motoyuki Yamamoto
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX61-186505 19860808; JPX61-225842 19860926
- 主分类号: H01S5/20
- IPC分类号: H01S5/20 ; H01S5/223 ; H01S5/323
摘要:
A double-heterostructure semiconductor laser is disclosed which has a semiconductive substrate of a first conductivity type made of III-V compound semiconductor material, a first semiconductive cladding layer of the first conductivity type disposed above the substrate, an active layer made of a semiconductor film provided on said cladding layer to serve as a light emission layer, and a second semiconductive cladding layer of a second conductivity type provided on the active layer to define a light waveguide channel of the laser. The second cladding layer is made of a compound semiconductor containing indium, phosphorus, and aluminum. A contact layer section is provided on the second cladding layer to cover the light waveguide channel. The contact layer is made of a compound semiconductor material containing gallium and arsenic, and has a band gap discontinuity at a boundary region of the light waveguide channel to form a barrier which serves to effectively seal current carriers in the waveguide channel, while the laser is emitting a laser light. This contact layer may also serve as a current-blocking layer.