发明授权
- 专利标题: Multiple step metallization process
- 专利标题(中): 多步金属化工艺
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申请号: US414355申请日: 1989-09-29
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公开(公告)号: US4970176A公开(公告)日: 1990-11-13
- 发明人: Clarence J. Tracy , John L. Freeman, Jr. , Robert L. Duffin , Anthony Polito
- 申请人: Clarence J. Tracy , John L. Freeman, Jr. , Robert L. Duffin , Anthony Polito
- 申请人地址: IL Schaumburg
- 专利权人: Motorola, Inc.
- 当前专利权人: Motorola, Inc.
- 当前专利权人地址: IL Schaumburg
- 主分类号: H01L21/768
- IPC分类号: H01L21/768
摘要:
Metal step coverage is improved by utilizing a multiple step metallization process. In the first step, a thick portion of a metal layer is deposited on a semiconductor wafer at a cold temperature. The remaining amount of metal is deposited in a second step as the temperature is ramped up to allow for reflow of the metal layer through grain growth, recrystallization and bulk diffusion. The thick portion of the metal layer deposited at the cold temperature is of adequate thickness so that it remains continuous at the higher temperature and enhances via filling.
公开/授权文献
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